Product use The PECVD system uses radio frequency to ionize the gas containing the constituent atoms of the film to form a plasma locally. The plasma is highly chemically active and easy to react, depositing the desired film on the substrate. PECVD system configuration; 1.1200 degrees open sliding single temperature zone vacuum tube furnace 2. Plasma RF power supply 3. Multi-channel mass flow control system 4. Vacuum system (purchased separately) Product characteristics; Wide power supply range; Wide temperature range; Sputtering area is long; The whole tube is adjustable; It is exquisite and compact, cost-effective, and can achieve rapid rise and drop in temperature. It is an ideal choice for laboratory growing film graphene, metal film, ceramic film, composite film, etc. It can also be used as an extended plasma cleaning and etching.

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